may 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 1 m de10n050rh C single n - channel trench mosfet 10 0v absolute maximum ratings (t j = 25 o c ) characteristics symbol rating unit drain - source voltage v dss 100 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c (silicon limited) i d 13 6 a t c =25 o c (package limited) 120 t c = 100 o c (silicon limited) 9 6 pulsed drain current ( 2 ) i dm 480 power dissipation t c =25 o c p d 188 w t c =100 o c 93 single pulse avalanche energy ( 3 ) e as 288 mj junction and storage temperature range t j , t stg - 55~1 75 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 62.5 o c/w thermal resistance, junction - to - case r jc 0.8 md e10n050 single n - channel trench m osfet 10 0v, 120 a, 5.0 m features ? v ds = 10 0v ? i d = 1 20 a @v gs = 10v ? very low on - resistance r ds(on) < 5.0 m @v gs = 10v ? 100% uil tested ? 100% rg tested ? 175 o c operating temperature general description the MDE10N050 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance, and excellent quality. these devices can also be utilized in industrial applications such as low power drives of e - bike (e - vehicles), dc/dc converter, a nd general purpose app lications. t o - 263 g s d d g s
may 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 2 m de10n050rh C single n - channel trench mosfet 10 0v ordering information part number temp. range package packing ro hs status md e10n050rh - 55~ 175 o c to - 2 63 reel halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 drain cut - off current i dss v ds = 100 v, v gs = 0v - - 1.0 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 50 a - 4. 2 5. 0 m ? forward transconductance g fs v ds = 10 v, i d = 50 a - 80 - s dynamic characteristics total gate charge q g v ds = 50 v, i d = 50 a, v gs = 10v - 78 - nc gate - source charge q gs - 24 - gate - drain charge q gd - 1 7 - input capacitance c iss v ds = 40 v, v gs = 0v, f = 1.0mhz - 5, 429 - pf reverse transfer capacitance c rss - 47 - output capacitance c oss - 1,108 - turn - on delay time t d(on) v gs = 10v, v ds = 50 v, i d = 50 a , r g = 3.0 - 27 - ns rise time t r - 14 - turn - off delay time t d(off) - 63 - fall time t f - 15 - gate resistance rg f=1 mhz - 2.5 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 50 a, v gs = 0v - 0.9 1.2 v body diode reverse recovery time t rr i f = 50 a, dl/dt = 100a/s - 62 ns body diode reverse recovery charge q rr - 124 nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) 2. pulse width limited by t j max 3. e as is tested at starting tj = 25 , l = 1 . 0 mh, i as = 24 a, v gs = 10v
may 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 3 m de10n050rh C single n - channel trench mosfet 10 0v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 100 v gs , gate-source voltage [v] t j =25 ? c ? ds = 10v i d , drain current [a] -50 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 ? notes : 1. v gs = 10 v 2. i d = 50 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 180 200 8.0v 10.0v 6.0v v gs = 15v 5.0v 4.0v i d , drain current [a] v ds , drain-source voltage [v] 0 50 100 150 200 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs = 10v drain-source on-resistance [mohm] i d , drain current [a] 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 ? notes : i d = 50a t j = 25 ? c r ds(on) [mohm], drain-source on-resistance v gs , gate to source volatge [v] 0.0 0.3 0.6 0.9 1.2 1.5 1 10 100 t j =25 ? c ? notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v]
may 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 4 m de10n050rh C single n - channel trench mosfet 10 0v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 i d , drain current [a] t c , c a s e t e m p e r a t u r e [ ? ? ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 ? ? n o t e s : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t), thermal response t 1 , rectangular pulse duration [sec] 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 v ds = 50v ? note : i d = 50a v gs , gate-source voltage [v] q g , total gate charge [nc] 0.0 0.3 0.6 0.9 1.2 1.5 1 10 100 t j =25 ? c ? notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 35 40 0 2000 4000 6000 8000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 100 ms -- -- -- -- -- -- -- -- -- -- 1 ms 1s 10 ms dc 100 us operation in this area is limited by r ds(on) single pulse t j =max rated t c = 2 5 ? ? i d , drain current [a] v ds , drain-source voltage [v]
may 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 5 m de10n050rh C single n - channel trench mosfet 10 0v package dimension 3 leads , to - 2 63 dimensions are in millimeters unless otherwise specified
may 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 6 m de10n050rh C single n - channel trench mosfet 10 0v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the ri ght to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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